MRF8S21140HR3 MRF8S21140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
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Typical Single-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
=
970
mA,
Pout
= 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84
MHz, Input Signal PAR = 7.5
dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.7
32.1
6.2
-37.0
2140 MHz
17.9
31.7
6.4
-37.5
2170 MHz
18.1
31.7
6.4
-37.5
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
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Typical Pout
@ 1 dB Compression Point
126 Watts CW
Features
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100% PAR Tested for Guaranteed Output Power Capability
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Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
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Internally Matched for Ease of Use
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Integrated ESD Protection
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Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
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Designed for Digital Predistortion Error Correction Systems
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Optimized for Doherty Applications
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
168
0.86
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ
= 970 mA, 2140 MHz
(1), 28 Vdc, IDQ
= 970 mA, 2140 MHz
Case Temperature 80°C, 150 W CW
RθJC
0.47
0.42
°C/W
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S21140H
Rev. 0, 5/2010
Freescale Semiconductor
Technical Data
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S21140HR3
MRF8S21140HSR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
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Freescale Semiconductor, Inc., 2010. All rights reserved.
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