MRF8S21140HSR3【PDF 1/14 页】FET RF N-CH 2GHZ 28V NI780S

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MRF8S21140HR3 MRF8S21140HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies

from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

Typical Single-Carrier W-CDMA Performance: VDD

= 28 Volts, I

970

mA,

Pout

= 34 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84

MHz, Input Signal PAR = 7.5

dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

17.7

32.1

6.2

-37.0

2140 MHz

17.9

31.7

6.4

-37.5

2170 MHz

18.1

31.7

6.4

-37.5

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)

Output Power (3 dB Input Overdrive from Rated Pout)

Typical Pout

@ 1 dB Compression Point

126 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-0.5, +65

Vdc

Gate-Source Voltage

VGS

-6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature (2,3)

225

°C

CW Operation @ TC

= 25

°C

Derate above 25°C

168

0.86

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (3,4)

Unit

Thermal Resistance, Junction to Case

Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ

= 970 mA, 2140 MHz

(1), 28 Vdc, IDQ

= 970 mA, 2140 MHz

Case Temperature 80°C, 150 W CW

RθJC

0.47

0.42

°C/W

Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

Continuous use at maximum temperature will affect MTTF.

MTTF calculator available at http://www.freescale.com/rf

. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF8S21140H

Rev. 0, 5/2010

Freescale Semiconductor

Technical Data

2110-2170 MHz, 34 W AVG., 28 V

W-CDMA, LTE

LATERAL N-CHANNEL

RF POWER MOSFETs

MRF8S21140HR3

MRF8S21140HSR3

CASE 465A-06, STYLE 1

NI-780S

MRF8S21140HSR3

CASE 465-06, STYLE 1

NI-780

MRF8S21140HR3

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